1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz

R Sandhu,M Wojtowicz, M Barsky, Rongguei Tsai,I P Smorchkova,C Namba,P H Liu, R M Dia,M Truong,Danny Ko, J W Yang, Haiyan Wang,M A Khan

Washington, DC, USA（2001）

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摘要

In this paper, we report the first GaN HEMT power device to operate at 29 GHz. The 0.2 μm T-gate AlGaN/GaN HEMT with a 120 μm total gate periphery exhibited a pulsed output power of 1.6 W/mm with a gain of 6.7 dB and an associated power aided efficiency of 26% at 29 GHz. The epitaxial layers were grown by MOCVD on SiC.

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关键词

iii-v semiconductors,mocvd,aluminium compounds,gallium compounds,microwave field effect transistors,microwave power transistors,power hemt,vapour phase epitaxial growth,wide band gap semiconductors,0.2 micron,120 micron,26 percent,29 ghz,6.7 db,algan-gan,algan/gan hemt,gan hemt power device,ka-band operation,mocvd growth,sic,sic substrate,t-gate hemt,epitaxial layers,high electron mobility transistors

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