High sensitivity, low voltage silicon photodetectors compatible with silicon integration

Wahl, J.A., Rogers, D., Tiwari, S.

Baltimore, MD, USA（2001）

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摘要

Summary form only given. The work reports a new high responsivity high sensitivity, high frequency and low voltage photodetector capable of operating at 850 nm and lower wavelengths at multi-GHz frequencies, while providing compatibility with silicon system-on-chip technology. By decoupling the carrier generation process from the carrier collection process, silicon can provide performance characteristics that are either comparable of superior to that achieved from III-V semiconductors. This decoupling is achieved using deep-trench technology based lateral p/sup ++/-polysilicon doped and n/sup ++/-doped junctions that allow for short carrier collection distances while allowing for large absorption depths. Use of poly-silicon-based junctions in silicon allows for low darkcurrent and nearly ideal diodes. Small junction separations and low doping allow low bias and efficient separation of carriers.

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关键词

elemental semiconductors,infrared detectors,integrated optics,optical design techniques,optical fabrication,photodetectors,silicon,850 nm,Si,Si integration,Si photodetectors,Si system-on-chip technology,absorption depths,carrier collection process,carrier generation process,decoupling,deep trench technology,efficient carrier separation,high frequency photodetector,high responsivity photodetector,high sensitivity photodetectors,low bias,low dark current,low doping,low voltage photodetectors,multi-GHz frequencies,n/sup ++/-doped junctions,nearly ideal diodes,p/sup ++/-poly-Si doped junctions,performance characteristics,poly-Si based junctions,short carrier collection distances,small junction separations,

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