30 GHz active mixer in a Si/SiGe bipolar technology

    Sydney, NSW, 2000, Pages 780-782.

    Cited by: 12|Bibtex|Views0|Links
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    Keywords:
    ge-si alloysmmic mixersbipolar mimicbipolar mmicelemental semiconductorsMore(19+)

    Abstract:

    In this paper we present a 30 GHz active mixer fabricated in a 80 GHz fT silicon-germanium bipolar technology. It is based on a Gilbert cell and is capable of broadband operation down to DC. The mixer draws 2 mA from a single supply voltage of 4.9 V. It shows a conversion gain of more than 5.9 dB up to 30 GHz and a double-sideband noise f...More

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