High-frequency and noise characteristics of advanced Si and Si/SiGe bipolar transistors

K Aufinger,Herbert Knapp,S Boguth,T F Meister,J J Bock,M Wurzer,D Zoschg, L Treitinger

Munich（2000）

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摘要

The high-frequency and noise characteristics of advanced silicon-based bipolar transistors are presented and discussed. For the design of receivers both the noise at the RF signal carrier frequency and the phase noise of the system are critical issues. The first is dominated by the high-frequency noise properties of the transistors in the first amplifying stage of the receiver, the latter is influenced by the upconversion of the low-frequency noise of the devices. Hence both important frequency regions are included in this work. Implications for circuits are given

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关键词

bipolar transistors,elemental semiconductors,phase noise,radio receivers,radiofrequency amplifiers,radiofrequency oscillators,silicon,silicon compounds,hf characteristics,rf signal carrier frequency,si,sige,amplifier,elemental semiconductor,low noise amplifier,low-frequency noise,noise characteristics,oscillator design,receiver design,silicon-based bipolar transistors,transistors,upconversion,cutoff frequency,high frequency,radio frequency,noise figure,low frequency noise,bipolar transistor

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