Monolithic LNAs up to 10 GHz in a production-near 65 GHz f/sub max/ silicon bipolar technology

D Zoschg,Wilbert E Wilhelm,J J Bock,Herbert Knapp,M Wurzer,K Aufinger, H D Wohlmuth,Arpad L Scholtz

Radio Frequency Integrated Circuits（2000）

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摘要

Monolithic LNAs for frequencies of 2, 6, and 10 GHz have been fabricated in production-near silicon bipolar technology (0.4 /spl mu/m/65 GHz, f/sub max/). Measured results in 50 /spl Omega/ noise figure and gain are 1.1 dB/28 dB at 1.9 GHz, 1.8 dB/26 dB at 5.6 GHz, 2.8 dB/21.1 dB at 9.5 GHz, and 2.5 dB/16.6 dB at 10 GHz. These noise results are state of the art for homojunction silicon bipolar technologies and are able to compete with the best results for minimum noise figures published for SiGe technologies.

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关键词

mmic amplifiers,uhf amplifiers,uhf integrated circuits,bipolar mmic,bipolar analogue integrated circuits,elemental semiconductors,integrated circuit noise,silicon,0.4 micron,1.1 to 2.8 db,16.6 to 28 db,2 to 10 ghz,65 ghz,mmic,rfic,si,si bipolar technology,uhf ic,low noise amplifiers,monolithic lnas,production-near bipolar technology,radio frequency,noise figure,noise measurement,rlc circuits

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