DC/HF circuit model for LDMOS including self-heating and quasi-saturation

This paper presents a complete SPICE sub-circuit model for a lateral double diffused N-MOS (NLDMOS) in a 0.25 mu m BICMOS technology. The model accurately simulates the device under both DC and AC conditions. It accounts for all basic LDMOS phenomena such as graded channel, quasi-saturation, and self-heating effects. Moreover, the sub-circuit approach guarantees flexibility and portability in many simulators.