Converting an SRAM from bulk Si to partially depleted SOI
San Diego, CA（1999）
摘要
The conversion of an existing standard cell compatible SRAM macro to a partially depleted SOI process is described. The issues discovered in the conversion were: changed coupling capacitance and noise analysis, history effects in the sense amplifier, setup and hold time analysis and thermal effects. For each of these effects the steps taken to meet functionality requirements are explained
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关键词
cmos memory circuits,sram chips,integrated circuit design,integrated circuit noise,silicon-on-insulator,sram,coupling capacitance,functionality requirements,hold time analysis,noise analysis,partially depleted soi,sense amplifier,setup time analysis,thermal effects,copper,functional requirement,silicon on insulator,history,capacitance,timing analysis,decoding
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