Functional characteristics and radiation tolerance of AToM, the front-end chip of BaBar silicon vertex tracker

P. F. Manfredi, B. Abbott,A. Clark,John K Dewitt,S F Dow,A M Eisner, Qiao Fan,A. Frey,R P Johnson,A. Karcher,I. Kipnis,W. Kroeger,A. Leona,M E Levi,E. Mandelli,L. Luo,F. Morsani, Marianne C Nyman,A. Perazzo, M. Pedrali-Noy, Vincent Lo Re,N A Roe,N W Spencer

IEEE Transactions on Nuclear Science（1999）

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摘要

The readout chip designed to process the microstrip signals in the BaBar Silicon Vertex Tracker (SVT), after being realized twice in a radsoft technology has been transferred into the final radhard process. So far the circuit has gone through four different radhard submissions, one aiming at providing a preliminary insight into the characteristics of the radhard chip, the other ones constituting pre-production and production runs. Chips from these submissions have undergone a thorough set of tests addressing functional aspects, noise parameters and effects of radiation on signal and noise behavior. The present paper discusses the results of these tests and describes the final version of the circuit which has been proven to successfully meet the experiment requirements.

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关键词

nuclear electronics,position sensitive particle detectors,frontend chip,si,babar silicon vertex tracker,readout electronics,noise parameters,functional characteristics,semiconductor device noise,radhard process,silicon radiation detectors,microstrip signals,mixed analogue-digital integrated circuits,digital readout,front-end chip,readout chip,atom,radiation tolerance,radiation hardening (electronics),chip,front end

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