Low Leakage Current And High Dielectric Constant Lpd-Sio2/Mocvd-Tio2 Film Grown On (Nh4)(2)S-X Treated Inp Substrate

2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS（2005）

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摘要

The electrical characteristics of fluorinated silicon dioxide/titanium oxide films on ammonium sulfide treated InP were investigated. The leakage current is 1.45x10(-7) A/cm(2) under the electrical field at 1.5 MV/cm and the dielectric constant is 61.2.

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关键词

MOCVD,leakage currents,liquid phase deposition,permittivity,silicon compounds,thin films,titanium compounds,(NH4)2Sx,(NH4)2Sx treated InP substrate,InP,MOCVD-TiO2 film,SiO2- TiO2,ammonium sulfide,dielectric constant,electrical characteristics,electrical field effect,fluorinated silicon dioxide-titanium oxide films,leakage current,liquid phase deposition-SiO2 film

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