Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys: an enabling technology for scaled high performance silicon-based heterojunction devices

Sturm, J.C.,Yang, M.,Carroll, M.S.,Chang, C.L.

Ann Arbor, MI, USA（1998）

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摘要

Si/Si/sub 1-x/Ge/sub x/ heterostructures have traditionally faced both fundamental and practical limitations in their applications to advanced device technology. These hurdles have been most significantly been the well known critical thickness limitation for pseudomorphic growth and the less known sensitivity of devices to heterojunction process integration. In this paper, we review how Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys grown by rapid thermal chemical vapor deposition (RTCVD) are an enabling technology to overcome both these fundamental and practical issues. Examples are shown for sub-100-nm MOS devices.

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关键词

ge-si alloys,mosfet,chemical vapour deposition,diffusion,heterojunction bipolar transistors,rapid thermal processing,semiconductor growth,semiconductor heterojunctions,semiconductor materials,rtcvd,si-based heterojunction devices,si/sub 1-x-y/ge/sub x/c/sub y/ alloys,sigec,chemical vapor deposition,critical thickness limitation,dopant diffusion,enabling technology,heterojunction process integration,pseudomorphic growth,rapid thermal cvd,scaled high performance devices,ultrashort channel mos devices

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