High voltage swing and high data rate multiplexers in SiGe technology
Radio Frequency integrated Circuits（2005）
摘要
A 2:1 time-division multiplexer with high differential output voltage swing of 2×2 Vpp operating at a data rate of 40 Gb/s is reported. The circuit shows rise and fall times of about 11 ps and consumes 1.65 W. It is fabricated in 0.35 μm/200 GHz-fT production-near SiGe bipolar technology with a VCE0 of 1.8 V. Furthermore a high-speed 2:1 multiplexer capable of processing data rates higher than 80 Gb/s has been realized in the same technology. It consumes 0.75 W.
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关键词
ge-si alloys,bipolar integrated circuits,integrated circuit design,integrated circuit measurement,multiplexing equipment,optical communication equipment,optical fibre communication,semiconductor materials,time division multiplexing,0.35 micron,0.75 w,1.65 w,1.8 v,11 ps,200 ghz,40 gbit/s,80 gbit/s,sige,sige bipolar technology,sige technology,circuit rise and fall times,diffierential output voltage swing,fibre optic communication systems,high voltage swing high data rate multiplexers,high-speed multiplexer,operating data rate,processing data rates,time-division multiplexer,automotive engineering,cutoff frequency,indexing terms,voltage,multiplexing,high voltage
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