Transparent Contact Development for CdSe Top Cells in High Efficiency Tandem Structures
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005
Key words
Fermi level,II-VI semiconductors,IV-VI semiconductors,cadmium compounds,current density,electrical contacts,energy gap,semiconductor junctions,semiconductor thin films,short-circuit currents,solar cells,thin film devices,tin compounds,valence bands,wide band gap semiconductors,zinc compounds,16 percent,16% transparent CdSe device,25 to 30 percent,300 mV,575 mV,CdS-CdSe,CdSe top cells,CdSe-ZnSe:Cu,CdSe-ZnTe:Cu,CdSe/CIGS thin-film tandem devices,Fermi level,SiO2-SnO2:F,SnO2-CdSe,ZnO-CdSe,high efficiency tandem structures,n contact,p contact,sub band gap transmission,transparent contact development,transparent contact/CdSe/transparent contact structures,valence band alignment
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