W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design

Menglin Yu,M Matloubian,P Petre,L R Hamilton,R Bowen,M Lui,H C Sun,Chiu Ngo,P Janke

Gallium Arsenide Integrated Circuit（1998）

引用 6|浏览4

暂无评分

摘要

In this paper we report on the development of W-band MMIC power amplifiers using 0.1 /spl mu/m AlInAs-GaInAs-InP HEMT technology and finite-ground coplanar waveguide (FGCPW) designs. Two single-stage single-ended W-band MMICs using 150 /spl mu/m and 250 /spl mu/m wide HEMTs were designed, fabricated and tested. The results show that the small signal performance of the MMIC using the 150 /spl mu/m wide HEMT has a linear gain of more than 12 dB at 94 GHz. The corresponding amplifier exhibits an output power of 13.8 dBm with a power-added efficiency of 23%. The MMIC using the 250 /spl mu/m wide HEMT demonstrates 9 dB linear gain and the amplifier has a maximum output power of 16.7 dBm with 17.5% power added efficiency at 94 GHz. These power amplifiers are the first ever reported using a CPW configuration at this frequency.

查看译文

关键词

hemt integrated circuits,iii-v semiconductors,mmic power amplifiers,coplanar waveguide components,field effect mimic,indium compounds,integrated circuit design,millimetre wave power amplifiers,0.1 micron,12 db,17.5 percent,23 percent,9 db,94 ghz,alinas-gainas-inp,ehf,inp-based hemt mmic,mimic power amplifiers,w-band,coplanar waveguide designs,finite-ground cpw design,single-stage single-ended type,power amplifier,power added efficiency

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要