A Novel NAND-type PHINES Nitride Trapping Storage Flash Memory Cell with Physically 2-Bits-per-cell Storage, and a High Programming Throughput for Mass Storage Applications

CC Yeh,TH Wang,YY Liao,WJ Tsai,TC Lu,MS Chen,YR Chen,KF Chen, ZT Han, MS Wong, SM Hsu,NK Zous,TF Ou,WC Ting,J Ku,CY Lu

Digest of Technical Papers 2005 Symposium on VLSI Technology, 2005

Cited 7|Views34

Key words

NAND circuits,flash memories,semiconductor storage,silicon compounds,2-bits-per-cell storage,BTB current sensing,FN electron injection,NAND array,PHINES memory cells,PHINES nitride trapping storage flash memory cell,SONOS cell structure,band-to-band hot-hole injection,mass storage applications,programming throughput

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