SILC-related effects in flash E/sup 2/PROM's-Part II: Prediction of steady-state SILC-related disturb characteristics

J. de Blauwe,J. van Heudt,D. Wellekens,G. Groeseneken, H.E. Maes

IEEE Transactions on Electron Devices（1998）

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摘要

For Part I see J. de Blauwe et al., vol.45, no.8, pp.1745-50 (1998). In this paper, a new methodology is developed, and applied thereafter, to predict the disturb characteristics of an arbitrary Flash E/sup 2/PROM device which are related to steady-state stress induced leakage current (SILC). This prediction methodology is based on a quantitative model for steady-state SILC, which has been develop...

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关键词

Steady-state,Nonvolatile memory,Electrons,Stress,Leakage current,Dielectrics,Tunneling,Extrapolation,PROM,Predictive models

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