High-speed SiGe HBT technology and applications to mm-wave circuits

    pp. 61-64, 2004.

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    Keywords:
    ge-si alloysmmic frequency convertorsbipolar mimicfrequency dividersheterojunction bipolar transistorsMore(27+)

    Abstract:

    A SiGe bipolar technology for high frequency applications is presented. A transit frequency of 206 GHz, a maximum oscillation frequency of 200 GHz and a ring oscillator gate delay time of 3.9 ps have been obtained. With a 110 GHz dynamic frequency divider, a 86 GHz static frequency divider, a 52 GHz dual modulus 256/257 prescaler and a 98...More

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