Monolithic InP HEMT/HBT integrated circuit technology by selective molecular beam epitaxy

J Cowles, R Lai,L Tran,Hui Wang,Y C Chen,Keisuke Kobayashi,T Block,H C Yen, Peng Liu,A K Oki,D C Streit

Cape Cod, MA（1997）

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摘要

Co-integration of high performance InP HEMTs and HBTs has been achieved using selective MBE. The merged device technologies maintain the performance of their stand-alone counterparts and show excellent yield and uniformity. The first monolithic integrated circuits featuring both InP HEMTs and HBTs have been presented. The successful merging of these technologies on the same InP substrate represents a significant step towards larger scale millimeter wave integration and innovative system architectures

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关键词

hemt integrated circuits,iii-v semiconductors,mimic,bipolar integrated circuits,heterojunction bipolar transistors,indium compounds,integrated circuit measurement,integrated circuit technology,integrated circuit yield,molecular beam epitaxial growth,semiconductor growth,ic performance,inalas-ingaas-inp,inp,co-integration,large scale millimeter wave integration,merged device technologies,monolithic inp hemt/hbt integrated circuit technology,selective mbe,uniformity,yield,integrated circuit,etching,molecular beam epitaxy,space technology,millimeter wave

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