Analysis and Design of a 200 W LDMOS Based Doherty Amplifier for 3 G Base Stations

Gajadharsing, J.R., Bosma, O.,van Westen, P.

Microwave Symposium Digest, 2004 IEEE MTT-S International（2004）

引用 36|浏览0

关键词

MOSFET,amplitude modulation,code division multiple access,microstrip couplers,phase modulation,power amplifiers,semiconductor device models,2.11 to 2.17 GHz,200 W,200 W LDMOS based Doherty amplifier design,22 dB,3 G base stations,6 dB,AM-AM properties,AM-PM properties,asymmetrical planar coupler structure,class AB amplifiers,class C amplifiers,microstrip based elements,phase matching,two-carrier WCDMA

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