High performance antifuse with planar double dielectrics on Si1-xGex pad for field programmable gate array applications

Kim, J.,Park, M.Y., Song, Y.H., Jong Tae Baek

Electronics Letters（1996）

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摘要

A new antifuse device with a planar metal/dielectric/poly-Si1-xGex/dielectric/metal structure has been proposed for use in FPGAs as a voltage programmable link. The device has low leakage current (similar to 0.01 pA/antifuse) at an operating voltage of 5V and low on-resistance (similar to 13-15 Omega) with a 1 ms long 12.5V pulse.

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关键词

MIM devices,dielectric thin films,field programmable gate arrays,leakage currents,13 to 15 ohm,5 V,FPGA applications,Si1-xGex pad,SiGe,field programmable gate array,high performance antifuse,low leakage current,metal/dielectric/poly-Si1-xGex /dielectric/metal structure,planar double dielectrics,voltage programmable link

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