A 98 GHz voltage controlled oscillator in SiGe bipolar technology
ieee（2003）
摘要
In this paper two fully integrated voltage controlled oscillators (VCOs) in a 200GHz fT SiGe bipolar technology are presented. The oscillators use on-chip transmission lines in their resonators and at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -97 dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 GHz to 98.4 GHz and it consumes 12mA from a single -5 V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -98 dBc/Hz at 1 MHz offset frequency. These oscillation frequencies are the highest reported so far for fundamental-mode oscillators in silicon-based technologies.
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关键词
ge-si alloys,bipolar integrated circuits,integrated circuit design,voltage-controlled oscillators,-5 v,1 mhz,12 ma,200 ghz,80.5 to 84.8 ghz,95.2 to 98.4 ghz,98 ghz,sige,bipolar technology,impedance transformation,offset frequency,on-chip transmission lines,oscillation frequencies,phase noise,resonators,voltage controlled oscillator,transmission line,chip,oscillations
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