SiGe base bipolar technology with 74 GHz fmax and 11 ps gate delay

Meister, T.F.,Schafer, H.,Franosch, M.,Molzer, W.

Washington, DC（1995）

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摘要

An epitaxial SiGe-base bipolar technology suited for very high performance mixed digital/analogue applications is presented. A key feature is the emitter/base process which is the obvious SiGe-base extension of the implanted base double-poly self-aligned emitter/base structure. The fabricated HBTs exhibit a maximum cut-off frequency fT of 61 GHz, a maximum oscillation frequency fmax of 74 GHz and a record CML gate delay time of 11 ps

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关键词

Ge-Si alloys,bipolar digital integrated circuits,heterojunction bipolar transistors,integrated circuit technology,mixed analogue-digital integrated circuits,semiconductor materials,11 ps,61 GHz,74 GHz,HBT,SiGe,SiGe base bipolar technology,emitter/base process,epitaxial SiGe-base,mixed digital/analogue applications,

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