Highly manufacturable and reliable 32 Mb FRAM technology with novel BC and capacitor cleaning process

Y J Song,H J Joo,N W Jang,H H Kim, J H Park,Hee Young Kang,Sang Yoon Lee,Kinam Kim

Kyoto, Japan（2003）

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摘要

In this paper, the 32Mb FRAM were fabricated by enhancing the sensing window using several novel integration technologies such as highly oriented PZT films, seam-free BC technology and special capacitor cleaning technology.

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关键词

ferroelectric capacitors,ferroelectric materials,ferroelectric storage,ferroelectric thin films,lead compounds,random-access storage,reliability,surface cleaning,32 mb,32 mbit,fram,pzt,pbzro3tio3,capacitor cleaning process,highly oriented pzt films,sensing window,nonvolatile memory,capacitors,polymers,etching

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