A CMOS magnetic latch with extremely high resolution
San Francisco, CA, USA（2002）
摘要
A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.
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关键词
mosfet,magnetic field measurement,magnetic sensors,pattern recognition,cmos magnetic latch,magnetic field sensor,magnetic flux detection,magnetic pattern recognition,magnetic resolution,positive feedback,split-drain magnetic field-effect transistor,high resolution,magnetic field
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