A study of SiGe signal sources in the 220–330 GHz range

A Tomkins,Eric Dacquay,P Chevalier,Jurgen Hasch,Alain Chantre,B Sautreuil,S P Voinigescu

Bipolar/BiCMOS Circuits and Technology Meeting（2012）

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摘要

This paper investigates fundamental and push-push SiGe HBT voltage-controlled-oscillator topologies with and without doublers, as possible solutions for efficient milliwatt-level, low-noise signal sources at sub-millimeter wave frequencies. A fundamental frequency Colpitts VCO covers the 218-246 GHz range (the highest for SiGe HBTs) with up to -3.6 dBm output power and 0.8% efficiency. A Colpitts-Clapp VCO-doubler shows -1.7 dBm output power around 290 GHz, a record -101 dBc/Hz phase noise at 10 MHz offset, 7.5% tuning range and 0.4% efficiency. These efficiency numbers are 2-4 times higher than those of recently reported 300-GHz SiGe or CMOS sources based on multipliers or free-space power combining.

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关键词

ge-si alloys,bipolar mimic,heterojunction bipolar transistors,integrated circuit noise,millimetre wave oscillators,network topology,phase noise,signal sources,voltage-controlled oscillators,colpitts-clapp vco-doubler,sige,frequency 220 ghz to 330 ghz,fundamental frequency colpitts vco,milliwatt-level low-noise signal sources,push-push silicon-germanium hbt voltage-controlled oscillator topologies,silicon-germanium heterojunction bipolar transistors,silicongermanium heterojunction bipolar transistors,thz circuits,doubler,push-push vco,voltage-controlled oscillator

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