Algan/Gan Hemt High-Power And Low-Noise Performance At F >= 20 Ghz

Ip Smorchkova,M Wojtowicz, R Tsai,R Sandhu, M Barsky,C Namba,Ph Liu, R Dia,M Truong, D Ko, J Wang,H Wang,A Khan

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS（2002）

引用 5|浏览2

暂无评分

摘要

In this paper, we report on the power and noise performance of AlGaN/GaN HEMTs in the K (18 - 27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33 % has been achieved on a 8-finger 0.2 mum x 500 mum device. Minimum noise figure of 1.4 dB has been achieved on a 0.15 mum x 200 mum device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and LNA applications.

查看译文

关键词

iii-v semiconductors,aluminium compounds,gallium compounds,microwave field effect transistors,microwave power transistors,power hemt,semiconductor device noise,0.15 micron,0.2 micron,1.4 db,18 to 27 ghz,2 w,33 percent,8 db,algan-gan,algan/gan,cw output power,hemt,k band,lna,pae,high-frequency applications,low-noise performance,power performance,noise,high frequency,noise figure,performance engineering

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要