The Gate Misalignment Effects Of The Sub-Threshold Characteristics Of Sub-100nm Dg-Mosfets
ieee hong kong electron devices meeting（2002）
摘要
In this paper, simulation results of the gate misalignment effects on the sub-threshold characteristics of asymmetric (ADG) and symmetric (SDG) double-gate MOSFET (DG-MOSFET) in the sub-100nm regime are presented. Gates alignment in DG-MOSFETs becomes more and more difficult as devices are scaling down in non-self-aligned double-gate processes. The results show that gate misalignment effects are not as serious as generally expected and 60-80% misalignment is considered to be tolerable in some circuit applications.
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关键词
mosfet,100 nm,asymmetric double-gate mosfet,gate misalignment,nonself-aligned double-gate process,subthreshold characteristics,symmetric double-gate mosfet,computational modeling,medical simulation,threshold voltage,fabrication,dielectric constant,computer simulation
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