In-situ acoustic thermometry and tomography for rapid thermal processing

Yong Jin Lee,F L Degertekin,Jun Pei, T Khuriyakub,Krishna C Saraswat

Washington, DC, USA（1993）

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摘要

Temperature dependent velocity of acoustic waves guided by the silicon wafer is used to measure its temperature from 20/spl deg/C to 1000/spl deg/C with attainable accuracy of /spl plusmn/1/spl deg/C. The acoustic temperature sensor has been installed and tested in a rapid thermal processing environment. Temperature mapping is obtained by measuring the acoustic wave velocity along different paths on the wafer and applying tomographic inversion techniques.<>

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关键词

acoustic imaging,acoustic transducers,acoustic wave velocity,elemental semiconductors,rapid thermal processing,silicon,temperature measurement,20 to 1000 c,si,acoustic temperature sensor,acoustic thermometry,acoustic tomography,guided acoustic wave velocity,in-situ measurement,silicon wafer,temperature mapping,tomographic inversion,acoustic waves

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