Periodically Poled Bamgf4 For Ultraviolet Frequency Generation

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE  (2002)

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摘要
Summary form only given. Here, we report on ferroelectric domain inversion in BaMgF4 (BMF). This material has transparency to <140 nm, is resistant to solarization, and can be used for quasi-phase-matched interactions, which eliminates Poynting vector walk-off. We grow BMF by the Czochralski technique in an argon atmosphere, report optical damage testing results and visualize ferroelectric domains using an environmental scanning electron microscope.
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关键词
barium compounds,crystal growth from melt,electric domains,ferroelectric materials,optical materials,optical phase matching,scanning electron microscopy,transparency,ultraviolet sources,140 to 200 nm,BaMgF4,Czochralski technique,Poynting vector walk-off,UV transparency,environmental scanning electron microscope,ferroelectric domain inversion,optical damage testing,periodically poled BaMgF4,quasiphase-matched interactions,solarization resistance,ultraviolet frequency generation,
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