Fully monolithic Ku and Ka-band GaInP/GaAs HBT wideband VCOs

H Blanck,S L Delage,S Cassette,E Chartier,D Floriot,M A Diforte Poisson,Christian Brylinski, D Pons,P Roux,P Bourne, P Quentin

San Diego, CA, USA（1994）

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摘要

A family of fully monolithic VCOs utilizing GaInP/GaAs HBTs are presented for the first time. They operate at 14 GHz and 28 GHz with tuning bandwidths ranging from 10.7% to 19.6%. Output powers vary between -9dBm and +3 dBm with an integrated 6 dB attenuator to reduce pulling. The fabrication yield is higher than 50%. On-wafer measurements show a very small dispersion, and good agreement with the small signal simulations.<>

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关键词

iii-v semiconductors,indium compounds,integrated circuit testing,mmic,wideband vcos,very small dispersion,gainp/gaas,14 ghz,on-wafer measurements,gallium arsenide,small signal simulations,gainp-gaas,hbt,gainp/gaas hbts,heterojunction bipolar transistors,gallium compounds,output powers,variable-frequency oscillators,integrated 6 db attenuator,microwave oscillators,dispersion,ku-band,ka-band,mmics,fabrication yield,tuning bandwidths,voltage controlled oscillator,bipolar integrated circuits,hbt wideband vcos,28 ghz,fully monolithic

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