A four-channel monolithic optical/electronic selector for fast packet-switched WDMA networks
Photonics Technology Letters, IEEE（1994）
摘要
We report the characteristics of a four-channel monolithic GaAs optical/electronic selector for applications in fast packet-switched wavelength division multiaccess networks. The selector chip consists of four metal-semiconductor-metal photodetectors sharing a single differential transimpedance amplifier selected by four enhancement-mode MESFET switches. The channel switching time is about 2 ns and no appreciable crosstalk is observed from neighboring channels.
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关键词
III-V semiconductors,field effect integrated circuits,frequency division multiple access,gallium arsenide,infrared detectors,integrated optoelectronics,metal-semiconductor-metal structures,optical links,packet switching,photodetectors,semiconductor switches,0.85 micron,2 ns,GaAs,channel switching time,crosstalk,enhancement-mode MESFET switches,fast packet-switched WDMA networks,four-channel monolithic optical/electronic selector,metal-semiconductor-metal photodetectors,monolithic GaAs optical/electronic selector,selector chip,single differential transimpedance amplifier,wavelength division multiaccess networks
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