Gaas Solid-State Detectors For Physics At The Lhc

Santa Fe, NM, USA(1993)

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摘要
Progress with Schottky diode and p i n diode GaAs detectors for minimum ionizing particles is reported here. The radiation hardness and potential speed of simple diodes is shown to be more than competitive with silicon detectors. A discussion is given of the present understanding of the charge transport mechanism in the detectors as it influences their charge collection efficiency. Early results from micro-strip detectors are also described, (which are relevant for high radiation regions of LHC detectors near the beam pipe and in the forward region).
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schottky-barrier diodes,p-i-n diodes,position sensitive particle detectors,radiation hardening (electronics),semiconductor counters,gaas detectors,schottky diode,charge collection efficiency,charge transport mechanism,microstrip detectors,minimum ionizing particles,p-i-n diode,radiation hardness
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