Intrinsic Sensitivity Of Cdznte Semiconductors For Digital Radiographic Imaging

Gc Giakos,R Guntupalli,N Shah,S Vedantham, S Suryanarayanan,S Chowdhury, N Patnekar, S Sumrain,K Mehta

IMTC 2002: PROCEEDINGS OF THE 19TH IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE, VOLS 1 & 2（2002）

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摘要

The intrinsic sensitivity of Cd1-xZnxTe semiconductor detectors have been heoretically modeled and experimentally measured, within the x-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd1-xZnxTe detectors exhibit good intrinsic sensitivity.

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关键词

CdZuTe detectors, digital imaging, intrinsic sensitivity, image enhancement

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