A generalized hydrodynamic model capable of incorporating Monte Carlo results (LDD MOS devices)

R Thoma,A Emunds,B Meinerzhagen,H J Peifer,Walter L Engl

Washington, DC, USA（1989）

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摘要

A system of generalized hydrodynamic equations is derived from Boltzmann's transport equation without the assumption of a constant effective mass. This model has a structure similar to conventional hydrodynamic models, but requires four different relaxation times instead of two. If these relaxation times are extracted from the Monte Carlo model under homogeneous conditions using a nonparabolic band structure, the results of the hydrodynamic model agree well with corresponding results from the Monte Carlo model. Such a comparison of both models is demonstrated for an LDD (lightly doped drain) MOS device. It is concluded that the generalized model will be valuable for accurate and economical simulation of deep submicron devices.<>

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关键词

boltzmann equation,monte carlo methods,insulated gate field effect transistors,semiconductor device models,boltzmann transport equation,ldd mosfet,monte carlo results,constant effective mass,deep submicron devices,homogeneous conditions,hydrodynamic model,lightly doped drain mos device,nonparabolic band structure,relaxation times,band structure,relaxation time,transport equation,structural similarity,effective mass,monte carlo

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