Smart Co-Integration of Light Sensitive Layers with FDSOI Transistors for More Than Moore Applications
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2014）
Key words
integrated optoelectronics,silicon-on-insulator,BOX,FDSOI transistor,More than Moore application,TCAD simulation,buried oxide,fully depleted silicon-on-insulator technology,integrated light-sensitive device technology,light absorption,light sensitive layer,saturation drain current modulation,smart cointegration,voltage shift
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