3,000+ Hours Continuous Operation of GaN-on-Diamond HEMTs at 350°c Channel Temperature
Semiconductor Thermal Measurement and Management Symposium（2014）
关键词
III-V semiconductors,diamond,gallium compounds,high electron mobility transistors,silicon,wide band gap semiconductors,GaN,GaN-on-Si HEMTs,GaN-on-diamond HEMTs,Si,catastrophic failures,channel temperature,gallium nitride,temperature 290 C,temperature 350 C,Gallium Nitride, Diamond, HEMT, Power Amplifier, GaN,Reliability,on-Diamond
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