Advanced Wunsch-Bell based application for automotive pulse robustness sizing
Electrical Overstress/Electrostatic Discharge Symposium（2014）
摘要
In this paper we present an advanced methodology based on the Wunsch-Bell model. We demonstrate the advantage gained by combining transistor electrical SOA characteristics with the related failure current density decay over pulse time. The experimental results enable the prediction of the transistor robustness against long-duration disturbances in given applications.
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关键词
MOSFET,automotive electronics,current density,failure analysis,semiconductor device reliability,advanced Wunsch-Bell application,automotive pulse robustness sizing,failure current density decay over pulse time,long-duration disturbance,safe operating area,transistor electrical SOA characteristic,transistor robustness prediction
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