Millisecond annealing for advanced device fabrications

Yun Wang,Shaoyin Chen,Xiaoru Wang,Shen, M.

Ion Implantation Technology（2014）

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摘要

Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.

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关键词

cmos integrated circuits,dram chips,laser beam annealing,logic devices,cmos technology,dram,contact interface engineering,dopant activation,gate stack property modification,junction formation,laser spike annealing,logic device fabrications,millisecond annealing,strain enhancement,deactivation,laser spike annealing (lsa),parasitic resistance,reactivation

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