Schottky barrier height modulation in metal/N-Ge system

Z J Gong,S K Wang,Xu Yang,Bei Sun,Weimin Zhao,H D Chang,H G Liu

Solid-State and Integrated Circuit Technology（2014）

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摘要

Fermi level pinning at the Ge valence band results in a high Schottky barrier height (SBH) for all metal/n-Ge contacts. In this work, by inserting an ultrathin insulator between metal and germanium, the SBH of Al/Ge can be reduced from 0.6 eV to about 0.3 eV. Barrier height reduction was measured and compared for several inserted insulators. This structure has application as a low resistance ohmic contact for Ge nMOSFETs.

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关键词

fermi level,schottky barriers,aluminium,elemental semiconductors,germanium,ohmic contacts,semiconductor-metal boundaries,valence bands,al-ge,fermi level pinning,schottky barrier height modulation,low-resistance ohmic contact,metal-n-ge system,n-mosfet,ultrathin insulator,valence band

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