Atmospheric pressure chemical vapor deposition of silicon thin films using cyclohexasilane
Photovoltaic Specialist Conference(2014)
摘要
We report the deposition of silicon thin films at high rates using atmospheric pressure chemical vapor deposition (AP-CVD) with cyclohexasilane (CHS), a liquid-hydrosilane. A precursor solution of CHS in cyclooctane was aerosolized and subsequently vaporized prior to contacting with the substrate. Using CHS, Si thin films were obtained at temperatures as low as 300°C. A deposition rate of ~50 nm/s was observed at 500°C; while good-quality Si films were realized at 400°C. Structural analysis of the films indicates a combination of amorphous and nano-crystalline Si phases, withe 2-3 orders of photoconductivity.
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关键词
chemical vapour deposition,elemental semiconductors,photoconductivity,semiconductor growth,semiconductor thin films,silicon,si,amorphous silicon phase,atmospheric pressure chemical vapor deposition,cyclohexasilane,liquid-hydrosilane,nanocrystalline silicon phase,silicon thin films,structural analysis,temperature 400 degc,temperature 500 degc,ap-cvd,si thin films,high-rate growth,high-throughput manufacturing and silicon,roll-to-roll deposition
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