Resonant photoluminescence from Ge microdisks on Ge-on-insulator
Silicon-Germanium Technology and Device Meeting（2014）
摘要
Well-resolved resonant PL peaks were observed from microdisks fabricated on heavily n-doped GOI. FSR and Q-factor confirmed that these peaks corresponded to the WGMs of microdisk. Q-factors didn't decrease against pump power, indicating the onset of population inversion. Our results show that GOI is a promising platform to realize lasers.
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关键词
q-factor,elemental semiconductors,germanium,integrated optics,micro-optomechanical devices,microcavities,microdisc lasers,micromechanical resonators,optical pumping,photoluminescence,population inversion,whispering gallery modes,ge-si,ge-sio2,si,free-spectrum range,microdisk resonators,pump power,tensile-strained heavily n-doped ge-on-insulator,well-resolved resonant photoluminescence,q factor,absorption,silicon
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