Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation Sige Hbts

Zachary E. Fleetwood,Adilson S. Cardoso,Ickhyun Song,Edward Wilcox,Nelson E. Lourenco,Stanley D. Phillips,Rajan Arora,Pauline Paki-Amouzou,John D. Cressler

IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2014）

引用 20|浏览2

关键词

Bandgap reference (BGR),enhanced low dose rate sensitivity (ELDRS),high dose rate (HDR),low dose rate (LDR),silicon-germanium heterojunction bipolar transistor (SiGe HBT),total ionizing dose (TID)

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