Static Nonlinearity in Graphene Field Effect Transistors
Electron Devices, IEEE Transactions (2014)
摘要
The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second- and third-order harmonic distortion (HD2, HD3), second-and third-order intermodulation distortion (ΔIM2, ΔIM3), and secondand third-order intercept points (AIIP2, AIIP3). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.
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关键词
field effect transistors,graphene,harmonic distortion,intermodulation distortion,network synthesis,δim2,δim3,aiip2,aiip3,gfet veriloga analytical model,gfet biasing conditions,gfet transconductor,hd2,hd3,circuit design,commercial circuit simulator,graphene field effect transistors,graphene-based field effect transistor transconductor,large-signal simulations,linearity requirement,second-order harmonic distortion,second-order intercept point,second-order intermodulation distortion,static linearity performance metrics,static nonlinearity,third-order harmonic distortion,third-order intercept point,third-order intermodulation distortion,graphene-based field effect transistor (gfet),rf circuit,rf circuit.,nonlinearity
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