An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P Moens, Cong Liu,Adrish Banerjee,P Vanmeerbeek,P Coppens,H Ziad,A Constant,Zuyi Li,H De Vleeschouwer, J Roigguitart,P Gassot,Filip Bauwens,E De Backer,Balaji Padmanabhan,Ali Salih, J M Parsey,M Tack

Power Semiconductor Devices & IC's（2014）

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摘要

This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.

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关键词

iii-v semiconductors,mocvd,elemental semiconductors,gallium compounds,passivation,power hemt,silicon,silicon compounds,wide band gap semiconductors,dhemt,gan,mishemt transistors,mocvd grown,si,sin,gate dielectric,low device capacitance,off-state leakage,on-state conduction,power devices,surface passivation,voltage 650 v,dielectrics,logic gates,capacitance

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