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19.5 Three-dimensional 128gb MLC Vertical NAND Flash-memory with 24-WL Stacked Layers and 50mb/s High-Speed Programming

Ki-Tae Park,Jin-Man Han,Dae-Han Kim,Sangwan Nam,Kihwan Choi,Minsu Kim,Pansuk Kwak,Doosub Lee,Yoon-Hee Choi,Kyung-Min Kang,Myung-Hoon Choi,Dong-Hun Kwak,Hyun Wook Park,Sang-Won Shim,Hyun-Jun Yoon,Doo-Hyun Kim,Sang-Won Park,Kangbin Lee,Kuihan Ko,Dong-Kyo Shim,Yang-Lo Ahn,Jeunghwan Park,Jinho Ryu,Donghyun Kim,Kyunghwa Yun,Joonsoo Kwon,Seunghoon Shin,Dongkyu Youn,Won-Tae Kim,Taehyun Kim,Sung-Jun Kim,Sungwhan Seo,Hyunggon Kim,Dae-Seok Byeon,Hyang-Ja Yang,Moosung Kim,Myong-Seok Kim,Jinseon Yeon,Jae-hoon Jang,Han-Soo Kim,Woonkyung Lee,Duheon Song,Sungsoo Lee,Kyehyun Kyung,Jeong-Hyuk Choi

ISSCC（2014）

Cited 266|Views90
Key words
NAND circuits,flash memories,three-dimensional integrated circuits,24-WL stacked layers,3D 128Gb 2b/cell vertical-NAND Flash,3D memory device,3K endurance,bit rate 50 Mbit/s,data center,embedded applications,enterprise SSD applications,high-speed programming,mobile applications,personal computer,storage capacity 128 Gbit,three-dimensional MLC vertical NAND flash-memory,write throughput
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