Fast step-down set algorithm of resistive switching memory with low programming energy and significant reliability improvement

Yongqing Meng,X Y Xue,Y L Song,J G Yang,B A Chen,Y Y Lin,Q T Zou, Ruizhang Huang,J G Wu

VLSI Technology（2014）

引用 7|浏览9

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摘要

We propose an asymmetric write algorithm of step-down set/step-up reset without verify for the first time. The demonstration is carried out on a 128Kb test macro of AlOx/WOx bi-layer ReRAM fabricated based on 0.18μm logic process. The set and reset energy per bit are reduced by 34% and 20% respectively. The set and reset access time decrease by 54% and 32% respectively. The mean value of endurance distribution is improved by 2 orders of magnitude from 107 to 109. Ron and Roff retention failure rate is reduced by 88% and 71% respectively. Roff/Ron window enlarges from 25× to 180×. The reliability improvements are attributed to refinement of CF shape and size by the step-down set algorithm.

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关键词

aluminium compounds,random-access storage,reliability,tungsten compounds,alox-wox,asymmetric write algorithm,bilayer reram,low programming energy,memory size 128 kbyte,reset access time,resistive switching memory,retention failure rate,size 0.18 mum,step-down set algorithm,reram,endurance,retention,self-adaptive,ions,very large scale integration,optimization,shape,switches,programming

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