12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications

S Piotrowicz,O Jardel,E Chartier,Raphael Aubry,Leny Baczkowski,Michael A Casbon,C Dua,Laurent Escotte,Piero Gamarra,J Jacquet,N Michel,S D Nsele,M Oualli, O Patard, C Potier,M A Diforte Poisson,S L Delage

Microwave Symposium（2014）

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摘要

We report on the development of a 0.15μm gate length InAlN/GaN HEMT on SiC substrate technology for applications in K and Ka-Bands. Measurements results of pulsed I-V, S-parameters, load-pull and RF noise figure are presented. Devices exhibit a maximum DC transconductance of 350mS/mm and Idss of 0.95A/mm. Cut-off frequencies FT and Fmag of 45GHz and 100 GHz are reached. Load-pull power measurements at 18GHz allowed us to achieve an output power density of 12W/mm in pulsed mode at Vds=50V. At 30 GHz, 2.5W/mm was measured at Vds=20V. RF noise measurements showed a minimum noise figure of 1.25dB at 20 GHz.

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关键词

iii-v semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,indium compounds,millimetre wave field effect transistors,silicon compounds,wide band gap semiconductors,inaln-gan,k-bands,ka-bands,rf noise figure,rf noise measurements,s-parameters,sic,frequency 100 ghz,frequency 20 ghz,frequency 30 ghz,frequency 45 ghz,gate length hemts,load-pull power measurements,pulsed i-v,size 0.15 mum,voltage 20 v,voltage 50 v,inaln/gan hemt,k-band,ka-band,rf noise,load-pull,noise,noise figure,s parameters,k band

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