Advanced metal and dielectric barrier cap films for Cu low k interconnects

Deepika Priyadarshini,S Nguyen,H Shobha,S Cohen,T Shaw,E Liniger,C K Hu,Chelsea D Parks,E Adams, John Burnham,Andrew H Simon,Griselda Bonilla,A Grill,D Canaperi,Daniel C Edelstein, David Collins,Mihaela Balseanu, M Stolfi,Jinchang Ren, Karan M Shah

Interconnect Technology Conference / Advanced Metallization Conference（2014）

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摘要

Multi-layer SiN barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCNH barrier film used at previous technology nodes. Ultra-thin SiN barrier cap film also provides high conformality and fills recess in Cu lines observed post CMP. A significant enhancement in electro migration (EM) performance was obtained by selectively depositing Co on top of Cu lines followed by conformal multi-layer SiN barrier film. Further EM lifetime improvement is obtained by using a Co liner to form a wrap around structure with completely encapsulated Cu. An integrated in-situ preclean/ metal/dielectric cap chamber was used to avoid any oxidation of Cu/Co layers. Kinetic studies of CVD Co liner/Co cap samples show significant increase in EM activation energy (1.7 eV) over samples with dielectric only barrier film (0.9-1 eV). The complete wrap around structure with Co liner and Co cap shows improved device reliability.

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关键词

cvd coatings,chemical vapour deposition,cobalt,copper,electromigration,integrated circuit interconnections,integrated circuit reliability,low-k dielectric thin films,silicon compounds,cvd,co,cu,sin,conformal multilayer barrier film,copper-low k interconnects,electromigration lifetime,electromigration performance,high breakdown barrier film,low leakage barrier film,metal-dielectric barrier cap films,multilayer barrier film,preclean metal-dielectric cap chamber,metals,films,dielectrics,reliability,plasmas

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