10 kV, 120 a SiC MOSFET modules for a power electronics building block (PEBB)

10 kV, 120 A all-SiC half-bridge modules were tested and simulated for use in a 4 kV, 100 A power electronics building block (PEBB), which are standard, multifunctional units that can replace specialized devices in order to simplify the design and reduce the cost of power electronic systems. This PEBB design consists of four 10 kV SiC MOSFET modules in an H-bridge configuration. Each switch in the module contains twelve parallel 10 kV SiC DMOSFETs, and six parallel 10 kV SiC junction barrier Schottky (JBS) diodes. Double-pulse tests (DPTs) were conducted on the 10 kV modules up to 4.7 kV and 100 A in order to evaluate their hard switching capabilities. The DPT results revealed fast switching, with rise and fall times of 170 ns and 460 ns, respectively, and minimal ringing and overshoot. A Saber model of the module was then compared to the experimental results, which showed sufficient agreement with the testing waveforms. This model was then used to simulate the PEBB operation.