A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance

P M Smith,M Ashman,Dong Xu,Xiaoping Yang,Carl Creamer,P C Chao,Kanin Chu, K H Duh,Chengkok Koh,J M Schellenberg

Microwave Symposium（2014）

引用 25|浏览6

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摘要

A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with 20dB minimum gain across the 30-100GHz band and NF <;2.5dB over the 43-90GHz band. An LNA packaged in a WR-12 module has flange NF of 2.0dB over 74-80GHz and NF <;2.6dB with 27 ± 2dB gain across the full 60-90GHz waveguide band.

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关键词

hemt integrated circuits,field effect mimic,low noise amplifiers,millimetre wave amplifiers,mhemt millimeter wave lna,mmic lna,frequency 30 ghz to 100 ghz,gain 25 db,loss 1.6 db,low noise amplifier,size 50 nm,wideband gain performance,wideband noise performance,hemt,mmics,low noise amplifier (lna),millimeter wave circuits,noise figure (nf),noise measurement,noise,epitaxial growth

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