Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

Nuclear Science, IEEE Transactions （2014）

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摘要

Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.

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关键词

SRAM chips,ion beam effects,SRAM,gate oxide,heavy ion irradiation,microdose effect,single-event hard errors,static random-access memories,Angular dependence,charge yield,microdose,radiation induced leakage current (RILC),single-event hard error (SHE),soft breakdown (SBD),stuck bits

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